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Lead-free perovskite [H_3NC_6H_4NH_3]CuBr_4 with both a bandgap of 1.43 eV and excellent stability

李小磊  李臻  张高  杨冠军  
【摘要】:Searching less toxic materials with both ideal bandgaps(1.0–1.5 eV for single-junction solar cells) and excellent stability remains a big challenge in perovskite optoelectronic materials field. Here, we report the optoelectronic properties and stability of the [H_3NC_6H_4NH_3]CuBr_4 perovskite material. Intriguingly, the material features a bandgap of 1.43 eV which approaches that of GaAs(1.42 eV)—the state of the art semiconductor for single-junction solar cells. Furthermore, the [H_3NC_6H_4NH_3]CuBr_4 film shows excellent stability, and can tolerate continuous moisture exposure for 1200 h in air(relative humidity: 40–50%) and ultraviolet light exposure for 1008 h in a glove box filled with nitrogen. Finally, we successfully realized a pinhole-free, smooth, and large-area(20 cm~2) [H_3NC_6H_4NH_3]CuBr_4 film—the largest Cu-based perovskite film ever reported—via a hotcasting technique. Owing to its ideal bandgap and excellent stability, [H_3NC_6H_4NH_3]CuBr_4 can be considered as a milestone in the development of low bandgap, highly stable, and lead-free perovskite materials for potential optoelectronic applications.

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