A p-p+ homojunction enhanced hole transfer in inverted planar perovskite solar cells
【摘要】：Here, a p-p+ homojunction is constructed on basis of NiO film to enhance hole transfer in an inverted planar perovskite solar cell. The homojunction is fabricated by NiO/Cu:NiO bilayer film, DFT calculation demonstrates the charge density difference in the two layers, which could generate a space charge region and a band bending at the junction, the result is further proved by energy level structure analysis of NiO and Cu:NiO films. This homojunction could accelerate the hole transfer and inhibit carrier recombination at the interface between hole transfer layer and perovskite layer. This work develops a new structure of hole transport layer to enhance the performance of PSCs, and also provides new ideas for design of charge transfer films.