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Lead-free Perovskite [H_3NC_6H_4NH_3]CuBr_4 with both a Bandgap of 1.43 eV and Excellent Stability

Xiao-Lei Li  Zhen Li  Gao Zhang  Guan-Jun Yang  
【摘要】:Searching less toxic materials with both ideal bandgaps(1.0–1.5 eV for single-junction solar cells) and excellent stability remains a big challenge in perovskite optoelectronic materials field.Here,we report the optoelectronic properties and stability of the [H_3NC_6H_4NH_3]CuBr_4 perovskite material.Intriguingly,the material features a bandgap of 1.43 eV which approaches that of GaAs(1.42 eV)—the state of the art semiconductor for single-junction solar cells.Furthermore,the [H_3NC_6H_4NH_3]CuBr_4 film shows excellent stability,and can tolerate continuous moisture exposure for 1200 h in air(relative humidity:40–50%) and ultraviolet light exposure for 1008 h in a glove box filled with nitrogen.Finally,we successfully realized a pinhole-free,smooth,and large-area(20 cm~2) [H_3NC_6H_4NH_3]CuBr_4 film—the largest Cu-based perovskite film ever reported—via a hot-casting technique.Owing to its ideal bandgap and excellent stability,[H_3NC_6H_4NH_3]CuBr_4 can be considered as a milestone in the development of low bandgap,highly stable,and lead-free perovskite materials for potential optoelectronic applications.

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