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Formation of the PbI_2 nano domains within the perovskite films and its influence on the perovskite solar cell performance

Wu-Song Zha  Lian-Ping Zhang  Qun Luo  Chang-Qi Ma  
【摘要】:Perovskite solar cells(PSCs) attract much attentions for their high efficiency and low processing cost. Till now, high power conversion efficiency(PCE) of higher than 23% was reported~1, demonstrating excellent application prospect in the future. Crystalline property of the perovskite thin film plays a very important role in device performance. Therefore, much efforts were spent on controlling the growth process of perovskite film. It was reported that PbI_2 could passivate the boundary defects in the perovskite film~2. However, there is no systematical investigations on the formation of PbI_2 through precursor regulation, and detail influence of the PbI_2 on the device performance was not reported yet. In this report, by tuning the solvent content of the DMSO:GBL:DMF in the perovskite precursor, we have successfully controlled the formation of PbI_2 domains within the perovskite film. By analyzing the EQE, XRD of the perovskite films fabricated from the DMSO:GBL:DMF mixture solvents, we clearly demonstrated that formation of PdI_2 within the perovskite film is able to passivate the surface defect, and consequently improve the V_(OC) of the device. On the other hand, the existence of the PbI_2 domains decrease the EQE of the cell over 300-425 nm, and consequently decrease the device performance.

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