STM-Based Thermochemical Hole Burning Memory
【摘要】：正 The potential of scanning probe microscopy(SPM) on ultrahigh density data storage has been frequently demonstrated. The main strategy of SPM memories is to exploit the highly localized "field"(mostly electric field, force field, magnetic field, etc) to induce local physical or chemical changes of storage media. We report here on a thermochemical writing technique which uses the current Joule heat of scanning tunneling microscope(STM) to induce a localized thermally decomposing gasification of binary charge transfer complexes. We call it the thermochemical hole burning (THE) memory.