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The influence of band-gap graded on tunneling peak current for concentrationⅢ-Ⅴtandem solar cell

李雷  
【摘要】:正For concentrationⅢ-Ⅴtandem solar cells,very great tunneling peak current would be essential.Basing on Esaki diode tunneling theory,this paper simulated the impact of impurity density upon the peak current in a homo-junction GaAs/GaAs tunneling junction.And the influence of band-gap graded on tunneling peak current of solar cell was further taken into consideration,which would play a practical role in designing tunneling current configure ration of multi-junction solar cell.The results shows that high impurity density and band-gap graded have a great effect on the tunneling peak current.Typically,with doping concentration 5×l0~(19)cm~(-3) and the influence of the band-gap graded,1903.5A/cm~2 of the simulated GaAs/GaAs tunnel junction peak current has been obtained.Correspondingly,a practical value 139.2A/cm~2 of the tunneling current was developed,which could satisfy the conditions of work under the 1000 suns.

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