A visible light-emitting device made by P-doped silicon oxynitride films

【摘要】：正In our previous work,we introduced oxygen into the silicon nitride films then greatly increased the PL intensity in the silicon oxynitride(Si NO)films and the internal quantum efficiency of PL has been achieved as high as 60%.[1-4]Furthermore,EL from Si NO-based MIS light-emitting devices(LEDs)have been demonstrated.[5-6].In this work,P-doped Si NO films