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A visible light-emitting device made by P-doped silicon oxynitride films

林泽文  Kunji Chen  Pengzhan Zhang  Jun Xu  Tao Wu  Wei Li  Huafeng Yang  Xinfan Huang  
【摘要】:正In our previous work,we introduced oxygen into the silicon nitride films then greatly increased the PL intensity in the silicon oxynitride(Si NO)films and the internal quantum efficiency of PL has been achieved as high as 60%.[1-4]Furthermore,EL from Si NO-based MIS light-emitting devices(LEDs)have been demonstrated.[5-6].In this work,P-doped Si NO films

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