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The structure and composition of ultra-thin SiO_2/Si interface by plasma oxidation

【摘要】:正 Ultra-thin SiO_2 1ayer on Si (100) wafer have been fabricated by plasma oxidation at low temperature (250℃). Different take-off angle X-ray photoelectron spectroscopy (XPS) measurements reveal that the chemical composition in oxide layer is stoichiometric SiO_2 and the SiO_2/Si interface is abrupt. The thickness of ultra-thin oxide layer can be estimated from both XPS and ellipsometry.

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