Parallel Word Line Cell Layout for MASK ROM--《The Proceedings of the Third International Conference on Solid State and Integrated Circuit Technology》1992年

《The Proceedings of the Third International Conference on Solid State and Integrated Circuit Technology》 1992年

Parallel Word Line Cell Layout for MASK ROM

【摘要】：正 The features of MASK ROM in ASIC are discussed.And a cell layout with parallel word line is proposed.For P-well poly Si gate CMOS technology,the aspect ratio of W/L of programming P-MOSFET is properly chosen as around 7.The experiment results evidence that the proposals are feasible.

【分类号】：TP333.5
【正文快照】：

§1 Introduction Even though EPROM(Erasable Programmable ROM)is very widely usednowadays,MASK ROM is stiii getting its applications in a lot of fields.It is mainly because:(1) For vast volume ROM, such asautomation.1inguistic synthesis and sothese applic

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